بررسی خواص ترابرد الکترون درنیم رساناهای 4h-sic و6h-sic تحت تاثیرمیدان الکتریکی شدید

CVD growth of 3C-SiC on 4H-SiC substrate

The hetero epitaxial growth of 3C-SiC on nominally on-axis 4H-SiC is reported. A horizontal hot-wall CVD reactor working at low pressure is used to perform the growth experiments in a temperature range of 1200-1500 °C with the standard chemistry using silane and propane as precursors carried by a mix of hydrogen and argon. The optimal temperature for single-domain growth is found to be about 13...

Graphene formation mechanisms on 4H-SiC(0001)

Annealing of multivacancy defects in 4H-SiC

The annealing behavior of defects observed in electron paramagnetic resonance EPR and photoluminescence PL is discussed. We consider the divacancy the P6/P7 EPR centers and a previously unreported EPR center that we suggest is a VC-VSi-VC trivacancy and their relationship with each other and with the UD1–3 series of PL lines near 1 eV. We observe that the divacancy and the UD2 PL lines annealin...

High Performance Ultraviolet 4H-SiC Avalanche Photodiodes

Lateral Enlargement Growth Mechanism of 3C-SiC on Off-Oriented 4H-SiC Substrates

Characterization of Large Area 4H-SiC and 6H-SiC Capacitive Devices

SiC based capacitive devices have the potential to operate in high temperature, chemically corrosive environments provided that the electrical integrity of the gate oxide and metallization can be maintained in these environments. We report on the performance of large area, up to 8 x 10 -3 cm, field-effect capacitive sensors fabricated on both the 4H and 6H polytypes at 600°C. Large area capacit...